• Part: CHA6005-QEG
  • Description: High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 729.74 KB
Download CHA6005-QEG Datasheet PDF
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Datasheet Summary

Pout @ 1dBp (dBm) & Linear Gain (dB) Idrain @ 1dBp (A) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from professional to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a RoHS pliant SMD package. Main Features - High power: 31.5dBm - High PAE: 33% - Frequency band:...