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CHA6005-QEG - High Power Amplifier

Description

The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%.

It is designed for a wide range of applications, from professional to commercial communication systems.

Features

  • High power: 31.5dBm.
  • High PAE: 33%.
  • Frequency band: 8-12GHz.
  • Linear gain: 20dB.
  • DC bias: VD=8Volt@Id=420mA.
  • 24L-QFN4x5.
  • MSL3 50 45 40 35 30 25 20 15 10 5 0 7 0.7 0.6 0.5 0.4 0.3 Pout_1dBcomp Linear Gain 8 9 10 11 Frequency (GHz) ID (A) 0.2 12 13 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 1dB comp. PAE1dB Power Added Efficiency @ 1dB comp. Min Typ Max Unit 8 12 G.

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Datasheet Details

Part number CHA6005-QEG
Manufacturer United Monolithic Semiconductors
File Size 729.74 KB
Description High Power Amplifier
Datasheet download datasheet CHA6005-QEG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6005-QEG Pout @ 1dBcomp (dBm) & Linear Gain (dB) Idrain @ 1dBcomp (A) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a RoHS compliant SMD package. Main Features ■ High power: 31.
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