• Part: CHA6005-QEG
  • Description: High Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 729.74 KB
Download CHA6005-QEG Datasheet PDF
United Monolithic Semiconductors
CHA6005-QEG
Description The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5d Bm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from professional to mercial munication systems. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a Ro HS pliant SMD package. Main Features - High power: 31.5d Bm - High PAE: 33% - Frequency band: 8-12GHz - Linear gain: 20d B - DC bias: VD=8Volt@Id=420m A - 24L-QFN4x5 - MSL3 50 45 40 35 30 25 20 15 10 5 0 Pout_1d Bp Linear Gain Frequency (GHz) ID (A) 12 13 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Linear Gain P1d B Output Power @ 1d B p. PAE1d B Power Added Efficiency @ 1d B p. Min Typ Max Unit 12...